Product Attribute |
Attribute Value |
Manufacturer |
Infineon |
Product Category |
IGBT Modules |
RoHS |
|
Product |
IGBT Silicon Modules |
Maximum Gate Emitter Voltage |
20 V |
Mounting Style |
Through Hole |
Pd - Power Dissipation |
20 mW |
Product Type |
IGBT Modules |
Package / Case |
EconoPIM 3 |
Collector- Emitter Voltage VCEO Max |
1200 V |
Collector-Emitter Saturation Voltage |
1.75 V |
Minimum Operating Temperature |
- 40 C |
Maximum Operating Temperature |
+ 150 C |
Packaging |
Tray |
Part # Aliases |
FP150R12KT4PB11BPSA1 SP001603806 |
Brand |
Infineon / IR |
Configuration |
Hex |
Continuous Collector Current at 25 C |
150 A |
Gate-Emitter Leakage Current |
100 nA |
Technology |
Si |
Factory Pack Quantity |
6 |
Subcategory |
IGBTs |