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FP150R12KT4

Manufacturer: Infineon / IR
Mfr.Part #: FP150R12KT4
RoHS:
Datasheet: FP150R12KT4
Description: IGBT Modules

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Product Technical Specifications
Product Attribute Attribute Value
Manufacturer Infineon
Product Category IGBT Modules
RoHS
Product IGBT Silicon Modules
Maximum Gate Emitter Voltage 20 V
Mounting Style Through Hole
Pd - Power Dissipation 20 mW
Product Type IGBT Modules
Package / Case EconoPIM 3
Collector- Emitter Voltage VCEO Max 1200 V
Collector-Emitter Saturation Voltage 1.75 V
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C
Packaging Tray
Part # Aliases FP150R12KT4BPSA1 SP001603812
Brand Infineon / IR
Configuration Hex
Continuous Collector Current at 25 C 150 A
Gate-Emitter Leakage Current 100 nA
Technology Si
Factory Pack Quantity 10
Subcategory IGBTs

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