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IRF60R217

Manufacturer: Infineon / IR
Mfr.Part #: IRF60R217
RoHS:
Datasheet: IRF60R217
Description: MOSFET 60V, 58A, 9.9 mOhm 40 nC Qg

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Product Technical Specifications
Product Attribute Attribute Value
Manufacturer Infineon
Product Category MOSFET
RoHS
Forward Transconductance - Min 120 S
Rds On - Drain-Source Resistance 8 mOhms
Rise Time 29 ns
Fall Time 12 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 83 W
Product Type MOSFET
Number of Channels 1 Channel
Package / Case TO-252-3
Length 6.5 mm
Width 6.22 mm
Height 2.3 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Channel Mode Enhancement
Packaging Cut Tape or Reel
Part # Aliases SP001559662
Brand Infineon / IR
Configuration Single
Transistor Polarity N-Channel
Vgs - Gate-Source Voltage 20 V
Vgs th - Gate-Source Threshold Voltage 2.1 V
Qg - Gate Charge 40 nC
Technology Si
Id - Continuous Drain Current 58 A
Vds - Drain-Source Breakdown Voltage 60 V
Typical Turn-Off Delay Time 21 ns
Typical Turn-On Delay Time 7.6 ns
Factory Pack Quantity 2000
Subcategory MOSFETs
Unit Weight 0.081130 oz
Tradename StrongIRFET

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