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IRL2910STRRPBF

Manufacturer: Infineon / IR
Mfr.Part #: IRL2910STRRPBF
RoHS:
Datasheet: IRL2910STRRPBF
Description: MOSFET PLANAR_MOSFETS

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Product Technical Specifications
Product Attribute Attribute Value
Manufacturer Infineon
Product Category MOSFET
RoHS
Type HEXFET Power MOSFET
Rds On - Drain-Source Resistance 26 mOhms
Rise Time 100 ns
Fall Time 55 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 3.8 W
Product Type MOSFET
Number of Channels 1 Channel
Package / Case TO-252-3
Length 6.5 mm
Width 6.22 mm
Height 2.3 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Channel Mode Enhancement
Packaging Cut Tape or Reel
Part # Aliases SP001568464
Brand Infineon / IR
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 16 V
Qg - Gate Charge 93.3 nC
Technology Si
Id - Continuous Drain Current 55 A
Vds - Drain-Source Breakdown Voltage 100 V
Typical Turn-Off Delay Time 49 ns
Typical Turn-On Delay Time 11 ns
Factory Pack Quantity 800
Subcategory MOSFETs
Unit Weight 0.011993 oz

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